Al-O complex formation in ion implanted Czochralski and floating-zone Si substrates

La Ferla, A.; Torrisi, L.; Galvagno, G.; Rimini, E.; Ciavola, G.; Carnera, A.; Gasparotto, A.
January 1993
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p393
Academic Journal
Examines the formation of aluminum-oxygen complex in ion implanted Czochralski and floating-zone silicon substrates. Determination of electrical carrier and chemical profiles; Relation of electrical active dose to annealing time; Predeposition of aluminum from a solid source.


Related Articles

  • Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al[sup +] implantation. Stoemenos, J.; Pecz, B.; Heera, V. // Applied Physics Letters;5/3/1999, Vol. 74 Issue 18, p2602 

    Examines the aluminum carbide formation in silicon carbide (SiC) with high dose of aluminum ion implantation. Properties of SiC for electronic and mechanical applications; Similarities in the aluminum carbide precipitates with the silicon carbide matrix.

  • Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts. Carr, B. A.; Friedland, E.; Malherbe, J. B. // Journal of Applied Physics;4/1/1987, Vol. 61 Issue 7, p2566 

    Presents a study which investigated the electrical characteristics of aluminum-silicon contacts before and after argon ion implantation. Damage caused by implantation to silicon; Use of the application of ion implantation through the aluminum-silicon interface; Results and discussion.

  • Effectiveness of AIN encapsulant in annealing ion-implanted SiC. Handy, Evan M.; Rao, Mulpuri V. // Journal of Applied Physics;7/15/1999, Vol. 86 Issue 2, p746 

    Presents information on a study which determined the usefulness of aluminum nitride as encapsulant for annealing nitrogen, arsenic, antimony, aluminum and boron ion-implanted silicon carbide. Experimental procedure; Results and discussion; Conclusions.

  • Phase formation due to high dose aluminum implantation into silicon carbide. Heera, V.; Reuther, H. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p78 

    Presents information on a study which discussed the phase formation due to high dose of aluminum implantation into silicon carbide. Microstructure; Chemical reactions and compositional changes; Conclusions.

  • Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers. Lazar, M.; Raynaud, C.; Planson, D.; Chante, J.-P.; Locatelli, M.-L.; Ottaviani, L.; Godignon, Ph. // Journal of Applied Physics;9/1/2003, Vol. 94 Issue 5, p2992 

    Epilayers of 6H and 4H–SiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted...

  • Optical properties of aluminum-implanted and annealed silicon. Brüesch, P.; Halder, E.; Kluge, P.; Roggwiller, P.; Stockmeier, Th.; Lindner, J. K. N. // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p2074 

    Investigates the optical properties of aluminum-implanted and annealed silicon. Problem associated with the use of aluminum as a dopant in silicon power devices; Analysis of reflectivity and transmission measurements to different states extending from the far-infrared to the ultraviolet region;...

  • Phosphorus-related donors in 6H-SiC generated by ion implantation. Troffer, T.; Peppermüller, C.; Pensl, G.; Rottner, K.; Schöner, A. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3739 

    Focuses on a study which determined the ionization energy of phosphorus donors in aluminum-doped silicon carbide epilayers generated by ion implantation. Advantages of silicon carbide; Methodology of the study; Results and discussion.

  • Al and B ion-implantations in 6H- and 3C-SiC. Rao, Mulpuri V.; Griffiths, Peter; Holland, O. W.; Kelner, G.; Freitas, J. A.; Simons, David S.; Chi, P. H.; Ghezzo, M. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2479 

    Presents information on a study which evaluated the thermal stability of low and high energy aluminum and boron implants performed in n-type 6H- and 3C-SiC devices. Experimental details; Results and discussion; Conclusions.

  • Formation of a nearly pure aluminum layer in beryllium using ion implantation. Brown, D. W.; Musket, R. G.; Munir, Z. A. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p326 

    A nearly pure subsurface layer of an implanted element was created using aluminum implantation into beryllium. In particular, post-implant annealing of polycrystalline beryllium samples implanted with 200 keV aluminum caused a dramatic increase in the peak aluminum concentration as determined by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics