TITLE

Al-O complex formation in ion implanted Czochralski and floating-zone Si substrates

AUTHOR(S)
La Ferla, A.; Torrisi, L.; Galvagno, G.; Rimini, E.; Ciavola, G.; Carnera, A.; Gasparotto, A.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p393
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of aluminum-oxygen complex in ion implanted Czochralski and floating-zone silicon substrates. Determination of electrical carrier and chemical profiles; Relation of electrical active dose to annealing time; Predeposition of aluminum from a solid source.
ACCESSION #
4329494

 

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