TITLE

Segregation and defect termination of fluorine at SiO[sub 2]/Si interfaces

AUTHOR(S)
Ono, Y.; Tabe, M.; Sakakibara, Y.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p375
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the segregation and defect termination of fluorine at silicon dioxide/silicon interfaces. Distribution of fluorine at the interface region; Termination of trivalent silicon dangling bonds by fluorine atoms; Correlation between fluorine concentration to thermal diffusion.
ACCESSION #
4329488

 

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