TITLE

Different types of pore structure in porous silicon

AUTHOR(S)
Parkhutik, V.P.; Albella, J.M.; Martinez-Duart, J.M.; Gomez-Rodriguez, J.M.; Baro, A.M.; Shershulsky, V.I.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p366
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the morphology of pores formed in porous silicon layer by anodic polarization in hydrofluoric acid. Types of pore structure; Formation of passive oxide layer at the bottom of each pore; Possibility of changing porosity type.
ACCESSION #
4329485

 

Related Articles

  • Polarization memory in an oxidized porous SiC layer. Danishevskii, A. M.; Rogachev, A. Yu.; Shuman, V. B.; Guk, E. G. // Semiconductors;Nov97, Vol. 31 Issue 11, p1196 

    Polarization and polarization memory of pulsed photoluminescence are observed on porous layers prepared on microcrystalline, cubic SiC films deposited on silicon substrates. The porous layer is oxidized by electrochemical means. A qualitative model is proposed to account for the mechanism...

  • Connections between morphological and mechanical evolution during galvanic corrosion of micromachined polycrystalline and monocrystalline silicon. Miller, David C.; Boyce, Brad L.; Kotula, Paul G.; Stoldt, Conrad R. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p123518 

    Many microsystems fabrication technologies currently employ a metallic overlayer, such as gold, in electrical contact with silicon structural layers. During postprocessing in hydrofluoric-based acid solutions, a galvanic cell is created between the silicon and the metallic layer. Micromachined...

  • Second-harmonic confocal microscopy of layered microstructures based on porous silicon. Maidykovski, A.; Nagorskii, N.; Murzina, T.; Nikulin, A.; Magnitskii, S.; Aktsipetrov, O. // JETP Letters;Nov2011, Vol. 94 Issue 6, p451 

    Layered structures based on porous silicon have been studied by confocal microscopy of the second optical harmonic. A linear increase in the second-harmonic intensity with increasing porosity of the layers has been observed. This behavior may result from spatial fluctuations in the dipole...

  • Energy transfer in porous-silicon/laser-dye composite evidenced by polarization memory of photoluminescence. Chouket, A.; Elhouichet, H.; Oueslati, M.; Koyama, H.; Gelloz, B.; Koshida, N. // Applied Physics Letters;11/19/2007, Vol. 91 Issue 21, p211902 

    The optical properties of nanocomposites are studied for rhodamine B (RhB) dye molecules embedded in nanoscale porous silicon (PS) and porous silica (P-silica). The samples are prepared by simple immersion of porous matrix substrates in RhB solutions. Fourier transform infrared spectroscopy...

  • Effect of Immersion Reaction Condition on the Morphology and Optical Properties of ZnO Nanorods Grown on Porous Silicon Substrates. Amizam, S.; Mamat, M. H.; Khusaimi, Z.; Rafaie, H. A.; Sahdan, M. Z.; Abdullah, S.; Rusop, M. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p671 

    We report the structural and optical properties of ZnO nanorods grown on porous silicon substrate using sol-gel immersion method under different conditions. A simple method to prepare the ZnO nanorods from aqueous solution that contain zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and...

  • Porous silicon: From luminescence to LEDs. Collins, Reuben T.; Fauchet, Philippe M. // Physics Today;Jan97, Vol. 50 Issue 1, p24 

    Highlights the development of a technology that would permit optical, and electronic devices to be easily and inexpensively integrated on a silicon wafer. Benefits of this advance on display, communications, computer, and other related technologies; Importance of putting light-emitting diodes...

  • Electrical conductance simulation of two-dimensional directional site percolated networks for... Yeh, Everett C.-C.; Hsu, Klaus Y.-J. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p326 

    Presents information on the modeling of two-dimensional porous silicon structures, as two-dimensional directional site percolated networks (2D-DSPNs). Information on the 2D-DSPNs models; Identification of the effects of porosity and geometrical connection on the electrical conduction behavior.

  • Erbium-doped porous silicon luminesces at 1.54 microns.  // Laser Focus World;Jul94, Vol. 30 Issue 7, p13 

    Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.

  • Photoeffect in porous silicon. Hlavka, Jan // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1404 

    Reports on the measurement of the photoeffect in porous silicon. Origin of the photoeffect; Photoeffect spectral dependencies; Time relaxation.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics