TITLE

Reactively sputtered titanium nitride films for submicron contact barrier metallization

AUTHOR(S)
Dixit, G.A.; Wei, C.C.; Liou, F.T.; Zhang, H.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p357
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of titanium nitride (TiN) film as a barrier metal for submicron metallization. Thermal stability of TiN; Oxygen passivation of TiN grain boundaries; Electrical and structural properties of TiN thin films.
ACCESSION #
4329482

 

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