Growth of strain-balanced InAsP/InGaP superlattices for 1.06 mum optical modulators

Chiu, T.H.; Cunningham, J.E.; Woodward, T.K.; Sizer II, T.
January 1993
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p340
Academic Journal
Examines the growth of strained-balanced indium arsenic phosphide/indium gallium phosphide multiple quantum wells by chemical beam epitaxy. Dislocations and composition fluctuations in the strained system; Reduction in nonradiative recombination centers; Variation of the energy gap caused by strain relaxation.


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