TITLE

Electron optical properties of nanometer field emission electron sources

AUTHOR(S)
Qian, W.; Scheinfein, M.R.; Spence, J.C.H.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p315
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines electron optical properties of nanometer diameter field emission electron using ray tracing methods. Discussion on spherical and chromatic aberration coefficients; Estimation of the effective source size; Details on the beam angular half-width.
ACCESSION #
4329468

 

Related Articles

  • Field emission properties of GaN films on Si(111). Berishev, I.; Bensaoula, A.; Rusakova, I.; Karabutov, A.; Ugarov, M.; Ageev, V. P. // Applied Physics Letters;9/28/1998, Vol. 73 Issue 13 

    GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was...

  • Carbon nanotube electron emitters with a gated structure using backside exposure processes. Chung, Deuk-Seok; Park, S. H.; Lee, H. W.; Choi, J. H.; Cha, S. N.; Kim, J. W.; Jang, J. E.; Min, K. W.; Cho, S. H.; Yoon, M. J.; Lee, J. S.; Lee, C. K.; Yoo, J. H.; Kim, Jong-Min; Jung, J. E.; Jin, Y. W.; Park, Y. J.; You, J. B. // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4045 

    We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive...

  • Field emission cathode with electron optics for use in Hall thrusters. Kronhaus, I.; Kapulkin, A.; Guelman, M. // Journal of Applied Physics;Sep2010, Vol. 108 Issue 5, p054507 

    This paper is devoted to the development and numerical modeling of a field emission cathode for low power Hall thrusters (100-300 W). Generally, Hall thrusters use hollow cathodes, which require a relatively large mass flow rate of xenon-gas to operate. For lower emission currents the cathode...

  • Carbon Nanotube Electron Source Technology. Teo, Kenneth // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Mar2007, Vol. 59 Issue 3, p29 

    The carbon nanotube embodies a unique combination of properties which make it potentially an extraordinary field emission electron source. These properties include small tip radii (and small source size), high electrical conductivity, high melting point, and resistance to electromigration under...

  • Analysis of nonuniform field emission from a sharp tip emitter of Lorentzian or hyperboloid shape. Sun, S.; Ang, L. K. // Journal of Applied Physics;Apr2013, Vol. 113 Issue 14, p144902 

    For a sharp tip emitter, due to the non-uniform emission feature and the electron beam expansion in the vacuum, it is difficult to precisely determine the average field enhancement factor βc as well as the effective emission area Seff for a single field emitter. In this paper, we conduct a...

  • Size distribution effects on self-assembled InAs quantum dots. Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. // Journal of Materials Science: Materials in Electronics;Oct2007 Supplement, Vol. 18, p191 

    We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the...

  • A microscopic theory for the optical properties of semiconductor quantum-dot systems. Lorke, M.; Seebeck, J.; Gartner, P.; Jahnke, F. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p923 

    A microscopic theory is used to study the optical absoprtion and gain spectra of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon interaction are determined from a quantum...

  • InAs flip-chip LEDs with InGaAsSb buffer layers. Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus�, N. M.; Shustov, V. V.; Tarakanova, N. G. // Semiconductors;Aug2006, Vol. 40 Issue 8, p977 

    Under study are the electrical and optical properties of n-InGaAsSb epitaxial layers with composition close to InAs and lattice-matched with it, fabricated on InAs substrates by LPE from Te-containing melts. The layers are transparent in the 3-�m range owing to the Moss-Burstein effect. The...

  • Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach. Kumar, Ashutosh; Latzel, Michael; Tessarek, C.; Christiansen, S.; Singh, R. // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 2, p02001-1 

    Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics