Fast degradation of boron-doped strained Si[sub 1--x]Ge[sub x] layers by 1-MeV electron irradiation

Vanhellemont, J.; Trauwaert, M.-A.; Poortmans, J.; Caymax, M.; Clauws, P.
January 1993
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p309
Academic Journal
Examines the fast degradation of boron-doped strained Si[sub (1-x)]Ge[sub x] layers by electron irradiation. Assessment of n[sup +]p[sup +] diodes on conventional p-type silicon substrates; Voltage and temperature characteristics before and after irradiation; Discussion on a possible degradation mechanism.


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