TITLE

Ion beam synthesis of cubic FeSi[sub 2]

AUTHOR(S)
Desimoni, J.; Bernas, H.; Behar, M.; Lin, X.W.; Washburn, J.; Liliental-Weber, Z.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the ion beam synthesis of iron disilicide. Occurrence of cubic precipitates as shown in high resolution electron microscopy; Avoidance of channeled implantation; Superimposition of weak spot regular arrays on silicon spots.
ACCESSION #
4329465

 

Related Articles

  • Growth kinetics of CoSi formed by ion beam irradiation at room temperature. Baba, A.; Aramaki, H.; Sadoh, T.; Tsurushima, T. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5480 

    Examines the growth kinetics of cobalt silicide layers formed by ion beam irradiation at room temperature. Identification of the CoSi phase by x-ray diffraction; Evaluation of the number of intermixed silicon atoms in the CoSi layers as a function of dose, dose rate and nuclear energy...

  • Growth and properties of ion beam synthesized Si/CoxNi1-xSi2/Si(111) structures. Wu, M. F.; Wachter, J. De; Van Bavel, A.-M.; Pattyn, H.; Langouche, G.; Vanhellemont, J.; Bender, H.; Temst, K.; Wuyts, B.; Bruynseraede, Y. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p1201 

    Provides information on a study that reported on the quality, strain and orientation of ion beam synthesis-formed Co[subx]Ni[sub1-x]Si[sub2] ternary silicide layers studied by Rutherford backscattering spectroscopy channeling, Auger electron spectroscopy transmission electron microscopy and...

  • The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes. Dehm, C.; Burte, E. P.; Gyulai, J.; Zimmermann, H. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4365 

    Presents a study which contacted diodes with shallow p[sub+]n junctions with titanium silicide films which were formed by ion beam mixing with germanium. Experimental procedure; Results and discussion.

  • Dose rate effects in focused ion beam synthesis of cobalt disilicide. Hausmann, Stephan; Bischoff, Lothar; Teichert, Jochen; Voelskow, Matthias; Grambole, Dieter; Herrmann, Folker; Mo¨ller, Wolfhard // Applied Physics Letters;5/25/1998, Vol. 72 Issue 21 

    The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co[sup 2+] implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an...

  • Suppression of silicide formation in Ta/Si system by ion-beam-assisted deposition. Joon Seop Kwak; Hong Koo Baik // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2451 

    Examines the suppression of silicide formation in a tantalum (Ta)/silicon system by ion-beam-assisted deposition of Ta film. Role of the suppression in increasing the failure temperature of Ta diffusion barrier for copper; Effects of ion bombardment of Ta layers; Attribution of silicide...

  • Shallow Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers. Mogul, H. C.; Steckl, A. J.; Novak, S. W. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2318 

    Presents a study which investigated focused ion beam (FIB) gallium (Ga) ion implantation through titanium metal (ITM) and TiSi[sub2] (ITS) layers followed by rapid thermal annealing, in self-aligned silicide technology. Overview of research on salicide technology; Details of an experiment on...

  • Dose-dependent precipitate evolution arising during implantation of Er into Si. Hogg, S. M.; Pipeleers, B.; Vantomme, A.; Bender, H.; Richard, O.; Swart, M. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p083514 

    Implant dose effects arising from the implantation of 166Er+ into Si(111) have been investigated. This study encompasses a wide dose range from 4×1015 to 1.2×1017 at. cm-2 and focuses on channeled implantation as random implantation leads to a high degree of self-sputtering and damage in...

  • STM study of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment. Kalka, T.; Preinesberger, C.; Vandré, S.; Dähne-Prietsch, M. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1073 

    Abstract. We present an STM study on the epitaxial growth of Dy silicides on Si surfaces, using ultra-sharp tips prepared by ion bombardment. On Si(111), 100 Angstrom wide flat surfaces are observed, which form screw dislocations at thicker coverages. On Si(001), rectangular silicide islands are...

  • Ion Beam Mixing at Crystalline and Amorphous Fe/Si Interfaces. Milinović, V.; Zhang, K.; Bibić, N.; Lieb, K. P.; Milosavljević, M.; Sahoo, P. K. // AIP Conference Proceedings;2006, Vol. 876 Issue 1, p209 

    Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics