Elimination of secondary defects in preamorphized Si by C[sup +] implantation

Nishikawa, Satoshi; Yamaji, Tetsuo
January 1993
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p303
Academic Journal
Examines the elimination of secondary defects in preamorphized silicon by carbon ion implantation. Impact of carbon on dislocation loop size and density; Investigation of carbon depth profiles; Occurrence of profile differences following annealing.


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