TITLE

Elimination of secondary defects in preamorphized Si by C[sup +] implantation

AUTHOR(S)
Nishikawa, Satoshi; Yamaji, Tetsuo
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the elimination of secondary defects in preamorphized silicon by carbon ion implantation. Impact of carbon on dislocation loop size and density; Investigation of carbon depth profiles; Occurrence of profile differences following annealing.
ACCESSION #
4329464

 

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