TITLE

Suppression of abnormal Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures

AUTHOR(S)
Kobayashi, Takashi; Kurishima, Kenji; Gosele, Ulrich
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p284
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the suppression of abnormal zinc diffusion in indium phosphide/indium gallium arsenide heterojunction bipolar transistor (HBT) structures. Provisions of HBT; Factors affecting zinc diffusion; Ways to attain thermodynamic equilibrium concentration of group III point defects.
ACCESSION #
4329456

 

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