TITLE

Carrier profile evaluation for a Zn-doped InGaAsP/InGaAsP multiquantum well using a

AUTHOR(S)
Yamamoto, Norio; Yokoyama, Kiyoyuki; Yamamoto, Mitsuo
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p252
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the carrier profile evaluation for multiquantum wells through a low-temperature capacitance-voltage meters of InGaAsp/InGaAsP. Relevance of lowering temperature in the achievement of a detailed carrier profile; Use of exact depletion layer extension; Efficacy of low temperature for investigation of the carrier profile.
ACCESSION #
4329445

 

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