TITLE

Influence of ion energy on the physical properties of plasma deposited SiO[sub 2] films

AUTHOR(S)
Joubert, O.; Burke, R.; Vallier, L.; Martinet, C.; Devine, R.A.B.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p228
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of ion energy on plasma deposited silicon oxide. Deposition of silicon dioxide films; Study of the effect of ion energy during deposition through the refractive index; Discovery of paramagnetic defect densities.
ACCESSION #
4329437

 

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