Influence of ion energy on the physical properties of plasma deposited SiO[sub 2] films

Joubert, O.; Burke, R.; Vallier, L.; Martinet, C.; Devine, R.A.B.
January 1993
Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p228
Academic Journal
Examines the influence of ion energy on plasma deposited silicon oxide. Deposition of silicon dioxide films; Study of the effect of ion energy during deposition through the refractive index; Discovery of paramagnetic defect densities.


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