Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better?

Ferguson, I.T.; Norman, A.G.; Joyce, B.A.; Seong, T-Y.; Booker, G.R.; Thomas, R.H.; Phillips, C.C.; Stradling, R.A.
December 1991
Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3324
Academic Journal
Presents the molecular beam epitaxial growth of As compounds strained layer superlattices. Separation into platelets of two different alloy compositions; Description of the natural strained layer superlattice growth mode; Distinct regimes of growth on various temperature range.


Related Articles

  • Properties of AlxGa1-xAs (xAl[bar_over_tilde:_approx._equal_to]0.3) grown by molecular-beam epitaxy on misoriented substrates. Tsui, R. K.; Curless, J. A.; Kramer, G. D.; Peffley, M. S.; Wicks, G. W. // Journal of Applied Physics;3/1/1986, Vol. 59 Issue 5, p1508 

    Examines the effects of substrate misorientation on the morphological and optical properties of Aluminum[subx]Gallium[1-x]Arsenic(x[subA1]...0.3) grown by molecular-beam epitaxy. Technique used to study the surface morphology of the (aluminum, gallium) arsenic layers; Result of the growth runs.

  • Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si[sub 2]H[sub 6] and AsH[sub 3]: Effects on film-growth kinetics. Kim, H.; Glass, G.; Soares, J. A. N. T.; Desjardins, P.; Greene, J. E. // Journal of Applied Physics;12/15/2000, Vol. 88 Issue 12 

    The effects of As doping, at concentrations C[sub As]≤4.8x10[sup 18] cm[sup -3], on the growth kinetics of Si(001):As layers deposited at temperatures T[sub s]=575-900 °C by gas-source molecular-beam epitaxy from Si[sub 2]H[sub 6] and AsH[sub 3] have been investigated. With constant...

  • Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy. Welch, D. F.; Wicks, G. W.; Eastman, L. F.; Parayanthal, P.; Pollak, F. H. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p169 

    The photoluminescence linewidth (4 K) of Al0.48In0.52As was reduced to 15 meV and its dependence was determined to be a strong function of the substrate temperature and As4 overpressure. Raman spectroscopy correlates the luminescence broadening to the crystallinity of the AlInAs. The ratio of...

  • Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures. González, L.; García, J. M.; García, R.; Briones, F.; Martínez-Pastor, J.; Ballesteros, C. // Applied Physics Letters;2/28/2000, Vol. 76 Issue 9 

    We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like...

  • Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy. Lin, S. D.; Lin, Z. C.; Lee, C. P. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054312 

    Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different...

  • Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping. Sadowski, J.; Janik, E.; Lusakowska, E.; Domagala, J. Z.; Kret, S.; Dlużewski, P.; Adell, M.; Kanski, J.; Ilver, L.; Brucas, R.; Hanson, M. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p263114 

    Formation of MnAs quantum dots in a regular ring-like distribution has been found on molecular beam epitaxy grown (GaMn)As(100) surfaces after low-temperature annealing under As capping. The appearance of the dots depends on the thickness and Mn concentration in the (GaMn)As layer. With 5 at. %...

  • Single and Coupled Microcavities — AlAs/GaAs DBR Pillars and GaAs Pyramids. Karl, M.; Löffler, W.; Lupaca-Schomber, J.; Passow, T.; Li, S.; Hawecker, J.; Pérez-Willard, F.; Gerthsen, D.; Kalt, H.; Klingshirn, C.; Hetterich, M. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1133 

    We discuss two different types of GaAs-based microcavities: Single and coupled pillar-type resonators with AlAs/GaAs distributed Bragg reflectors (DBRs) were fabricated by means of molecular-beam epitaxy (MBE) and focussed-ion-beam (FIB) milling. The dependence of the observed cavity modes on...

  • Arsenic complexes optical signatures in As-doped HgCdTe. Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. // Applied Physics Letters;4/8/2013, Vol. 102 Issue 14, p142104 

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the...

  • Unusually high critical current of clean P-doped BaFe2As2 single crystalline thin film. Kurth, F.; Tarantini, C.; Grinenko, V.; Hänisch, J.; Jaroszynski, J.; Reich, E.; Mori, Y.; Sakagami, A.; Kawaguchi, T.; Engelmann, J.; Schultz, L.; Holzapfel, B.; Ikuta, H.; Hühne, R.; Iida, K. // Applied Physics Letters;2/16/2015, Vol. 106 Issue 8, p1 

    Microstructurally clean, isovalently P-doped BaFe2As2 (Ba-122) single crystalline thin films have been prepared on MgO (001) substrates by molecular beam epitaxy. These films show a superconducting transition temperature (Tc) of over 30 K although P content is around 0.22, which is lower than...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics