In situ definition of semiconductor structures by selective area growth and etching
- Submicrometer-resolution etching of integrated circuit materials with laser-generated atomic fluorine. Loper, G. L.; Tabat, M. D. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3649
Presents information on a study that investigated the radical etching technique as a method to pattern and etch, with submicrometer resolution, various materials used in the fabrication of integrated circuits. Research methodology; Results and discussion.
- Curbing plasma-induced gate oxide damage. Gabriel, Calvin T. // Solid State Technology;Mar99, Vol. 42 Issue 3, p49
Describes how to minimize plasma-induced gate oxide damage in plasma etching of semiconductors. Need to optimize plasma-etching and deposition processes; Description of an in-line damage measurement technique; Tips on how to prevent charging damage; Catching charging on product wafers.
- New RIE plasma source may aid DESIRE process. K.D. // Solid State Technology;Mar95, Vol. 38 Issue 3, p26
Presents the results of a study evaluating an alternative plasma source that may aid the surface mount process for making semiconductors. Improvement in etch performance and residue formation; Solution to the conflict between increased lithographic resolution and reduced depth of focus;...
- Influence of a finite energy width on the hot electron double-slit interference experiment: A... Hongo, Hiroo; Miyamoto, Yasuyuki; Gault, Michael; Furuya, Kazuhito // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3846
Investigates the influence of electron energy width in the hot electron double-slit experiment in a semiconductor. Influence of finite energy width of the electron wave to double-slit experiment; Current-voltage characteristics of the graded emitter diode.
- Semiconductor manufacturers look to short wavelengths. Lewotsky, Kristin // Laser Focus World;Jul97, Vol. 33 Issue 7, p82
Reports on the efforts of semiconductor manufacturers to bring production-level 193-nm litography online. Organization of American efforts through an industry consortium; Production of small-field steppers for photoresist development.
- Dopant-selective etch stops in 6H and 3C SiC. Shor, J.S.; Kurtz, A.D. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1546
Describes a novel photoelectrochemical etching process for 6H- and 3C-SiC semiconductors. Basis for the etch-stop mechanism; Dissolution of silicon carbide.
- Composition-selective photochemical etching of compound semiconductors. Ashby, C. I. H.; Biefeld, R. M. // Applied Physics Letters;7/1/85, Vol. 47 Issue 1, p62
Compound semiconductor materials differing only in the relative amounts of constituent atoms are very difficult to etch selectively using current chemical etching techniques. We have developed a photochemical etching process that solves this problem by utilizing the difference in band gap of...
- The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance�Voltage Characteristics Measured during Electrochemical Etching. Karetnikova, I. R.; Nefedov, I. M.; Shashkin, V. I. // Semiconductors;Jul2001, Vol. 35 Issue 7, p766
The accuracy of a number of techniques for the reconstruction of doping profiles on the basis of the capacitance-voltage measurements in an electrochemical cell are numerically analyzed. The two previous simple methods proposed by us are shown not only to allow the direct determination of the...
- Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum-well laser diode. Kasukawa, A.; Bhat, R.; Caneau, C.; Zah, C.E.; Koza, M.A.; Lee, T.P. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1269
Reports the development of an etching technique for a buried heterostructure GaInAs/AlGaInAs quantum-well laser diode. Achievement of a three-micrometer-high mesa; Obtainment of flat surfaces after a two-step organometallic chemical vapor deposition growth.