In situ definition of semiconductor structures by selective area growth and etching
- Submicrometer-resolution etching of integrated circuit materials with laser-generated atomic fluorine. Loper, G. L.; Tabat, M. D. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3649
Presents information on a study that investigated the radical etching technique as a method to pattern and etch, with submicrometer resolution, various materials used in the fabrication of integrated circuits. Research methodology; Results and discussion.
- Curbing plasma-induced gate oxide damage. Gabriel, Calvin T. // Solid State Technology;Mar99, Vol. 42 Issue 3, p49
Describes how to minimize plasma-induced gate oxide damage in plasma etching of semiconductors. Need to optimize plasma-etching and deposition processes; Description of an in-line damage measurement technique; Tips on how to prevent charging damage; Catching charging on product wafers.
- New RIE plasma source may aid DESIRE process. K.D. // Solid State Technology;Mar95, Vol. 38 Issue 3, p26
Presents the results of a study evaluating an alternative plasma source that may aid the surface mount process for making semiconductors. Improvement in etch performance and residue formation; Solution to the conflict between increased lithographic resolution and reduced depth of focus;...
- Influence of a finite energy width on the hot electron double-slit interference experiment: A... Hongo, Hiroo; Miyamoto, Yasuyuki; Gault, Michael; Furuya, Kazuhito // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3846
Investigates the influence of electron energy width in the hot electron double-slit experiment in a semiconductor. Influence of finite energy width of the electron wave to double-slit experiment; Current-voltage characteristics of the graded emitter diode.
- Semiconductor manufacturers look to short wavelengths. Lewotsky, Kristin // Laser Focus World;Jul97, Vol. 33 Issue 7, p82
Reports on the efforts of semiconductor manufacturers to bring production-level 193-nm litography online. Organization of American efforts through an industry consortium; Production of small-field steppers for photoresist development.
- Dopant-selective etch stops in 6H and 3C SiC. Shor, J.S.; Kurtz, A.D. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1546
Describes a novel photoelectrochemical etching process for 6H- and 3C-SiC semiconductors. Basis for the etch-stop mechanism; Dissolution of silicon carbide.
- Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum-well laser diode. Kasukawa, A.; Bhat, R.; Caneau, C.; Zah, C.E.; Koza, M.A.; Lee, T.P. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1269
Reports the development of an etching technique for a buried heterostructure GaInAs/AlGaInAs quantum-well laser diode. Achievement of a three-micrometer-high mesa; Obtainment of flat surfaces after a two-step organometallic chemical vapor deposition growth.
- Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy. Siliquini, J. F.; Dell, J. M.; Musca, C. A.; Smith, E. P. G.; Faraone, L.; Piotrowski, J. // Applied Physics Letters;1/5/1998, Vol. 72 Issue 1
Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg[sub 0.71]Cd[sub 0.29]Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH[sub 4]/H[sub 2], 0.4 W/cm[sup 2]), n-type conversion...
- Etching by atomic hydrogen of Ge overlayers on Si(100). Zheng, Y.-J.; Ma, P. F.; Engstrom, J. R. // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3614
X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectrometry (LEISS) have been employed to study the kinetics of etching by atomic hydrogen of Ge overlayers on Si(100). The coverage of Ge as deduced by both XPS and LEISS decreases dramatically after exposure to atomic...