TITLE

Uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers with a lasing

AUTHOR(S)
Tanaka, T.; Yanagisawa, H.; Kakibayashi, H.; Minagawa, S.; Kajimura, T.
PUB. DATE
October 1991
SOURCE
Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1943
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers. Application of impurity doping into the multiquantum well (MQW) active layer; Calculation of quantized energy level in GaInP quantum wells; Comparison of uniform impurity with modulation doping.
ACCESSION #
4329214

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics