On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules

Hanke, M.; Dubslaff, M.; Schmidbauer, M.; Wang, Zh. M.; Mazur, Yu. I.; Lytvyn, P. M.; Lee, J. H.; Salamo, G. J.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023103
Academic Journal
A detailed growth scenario of surface quantum dot molecules (QDM) in the system (In,Ga)As/GaAs(001) has been investigated in terms of shape and elastic strain evolution. QDMs are grown by a combined approach using droplet epitaxy for initial homoepitaxial GaAs mounds, which subsequently serve as nucleation spots for surrounding (In,Ga)As surface quantum dots. Atomic force micrographs trace a detailed pathway toward the final QDM containing up to six quantum dots with perfect inherent symmetry. Synchrotron-based grazing incidence diffraction together with grazing incidence small angle x-ray scattering reveal a relaxation behavior, which for all growth stages comprises a strained lattice along [formula] and partial elastic relaxation along [110]. Numerical finite element calculations on the three-dimensional strain profile support the experimental findings.


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