Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer

Won Tae Kim; Jae Hun Jung; Tae Whan Kim
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022104
Academic Journal
Transmission electron microscopy images showed that multiwalled carbon nanotubes (MWCNTs) were dispersed in a poly-4-vinyl-phenol (PVP) layer. Capacitance-voltage (C-V) measurements on the Al/MWCNTs embedded in a PVP layer/p-Si (100) devices at 300 K showed a clockwise hysteresis with a large flatband voltage shift due to the existence of the MWCNTs. The magnitude of the flatband voltage shift in the C-V curve for the devices increased with increasing MWCNT concentration. The carrier transport mechanisms for the writing and the erasing processes for the Al/MWCNTs embedded in PVP/p-Si devices are described on the basis of the C-V results.


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