TITLE

Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer

AUTHOR(S)
Chen-Guan Lee; Sungjin Park; Ruoff, Rodney S.; Dodabalapur, Ananth
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The characteristics of thin-film transistors (TFTs) with pentacene active layers and source/drain contact layers consisting of either Au, Au coated with highly reduced graphene oxide (HRG), or plain HRG, are compared. It is shown that the incorporation of HRG as an interfacial material between gold source/drain contacts and pentacene in TFT devices results in improved electrical characteristics. The effect of the HRG layer is to improve the gold/pentacene interface leading to better charge injection, lower losses at the interface, and, consequently, higher effective carrier mobility.
ACCESSION #
43277393

 

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