Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

Nepal, N.; Zavada, J. M.; Dahal, R.; Ugolini, C.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022510
Academic Journal
We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%–25% indicating possible device applications.


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