TITLE

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

AUTHOR(S)
Nepal, N.; Zavada, J. M.; Dahal, R.; Ugolini, C.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%–25% indicating possible device applications.
ACCESSION #
43277375

 

Related Articles

  • Room temperature electrical spin injection in remanence. Hövel, S.; Gerhardt, N. C.; Hofmann, M. R.; Lo, F.-Y.; Ludwig, A.; Reuter, D.; Wieck, A. D.; Schuster, E.; Wende, H.; Keune, W.; Petracic, O.; Westerholt, K. // Applied Physics Letters;7/14/2008, Vol. 93 Issue 2, p021117 

    We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection...

  • Electrical spin injection using GaCrN in a GaN based spin light emitting diode. Banerjee, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Ganguly, S.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.; Saha, D. // Applied Physics Letters;12/9/2013, Vol. 103 Issue 24, p242408 

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the...

  • Ferromagnetism in hydrogenated N-doped amorphous carbon films. Liu, S. Y.; Zhen, C. M.; Li, Y. Z.; Pan, C. F.; Zhou, H. J.; Hou, D. L. // Journal of Applied Physics;Mar2012, Vol. 111 Issue 5, p053922 

    Room temperature ferromagnetism has been observed in hydrogenated N-doped amorphous carbon films (a-CNx:H) prepared by plasma enhanced chemical vapor deposition. The magnetization of the films changed depending on the ratio (R) of the flow rate of nitrogen to that of methane during deposition...

  • Room-temperature ferromagnetism in well-aligned Zn1-xCoxO nanorods. Wu, Jih-Jen; Liu, Sai-Chang; Yang, Ming-Hsun // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1027 

    Diluted magnetic semiconductor Zn1-xCoxO nanorods with a Curie temperature higher than 350 K have been synthesized by in situ doping of Co in ZnO nanorods using a simple thermal chemical vapor deposition method. Structural analyses indicated that the nanorod possesses the single-crystalline...

  • Bulk and surface physical properties of a CrO2 thin film prepared from a Cr8O21 precursor. Iwai, K.; Muraoka, Y.; Wakita, T.; Hirai, M.; Yokoya, T.; Kato, Y.; Muro, T.; Tamenori, Y. // Journal of Applied Physics;Sep2010, Vol. 108 Issue 4, p043916 

    We have prepared a CrO2 thin film by chemical vapor deposition from a Cr8O21 precursor and studied the bulk and surface physical properties. The CrO2 thin film is grown on a TiO2 (100) substrate by heating of a Cr8O21 precursor and TiO2 (100) substrate together in a sealed quartz tube. The...

  • Growth, electronic and magnetic properties of doped ZnO epitaxial and nanocrystalline films. Chambers, S.A.; Schwartz, D.A.; Liu, W.K.; Kittilstved, K.R.; Gamelin, D.R. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p1 

    We have used oxygen plasma assisted metal organic chemical vapor deposition along with wet chemical synthesis and spin coating to prepare CoxZn1-xO and MnxZn1-xO epitaxial and nanoparticle films. Co(II) and Mn(II) substitute for Zn(II) in the wurtzite lattice in materials synthesized by both...

  • First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate. Razeghi, M.; Blondeau, R.; Defour, M.; Omnes, F.; Maurel, P.; Brillouet, F. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p854 

    We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h...

  • Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition. Egawa, T.; Ishikawa, H.; Jimbo, T.; Umeno, M. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p830 

    We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron-beam induced current, and cathodoluminescence observations have shown that the degraded...

  • Pressure dependence of AlxGa1-xAs light emitting diodes near the direct-indirect transition. Kaliski, R. W.; Epler, J. E.; Holonyak, N.; Peanasky, M. J.; Herrmannsfeldt, G. A.; Drickamer, H. G.; Tsai, M. J.; Camras, M. D.; Kellert, F. G.; Wu, C. H.; Craford, M. G. // Journal of Applied Physics;3/1/1985, Vol. 57 Issue 5, p1734 

    Presents a study that examined Al[subx]Ga[sub1-x]As double heterostructure light emitting diodes (LED) grown by liquid phase epitaxy. Behavior of LED fabricated from a crystal grown by metalorganic chemical vapor deposition; Effect of residual defects and competing nonradiative recombination;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics