TITLE

Subnanometric Si film reactive diffusion on Ni

AUTHOR(S)
Portavoce, A.; Lalmi, B.; Tréglia, G.; Girardeaux, C.; Mangelinck, D.; Aufray, B.; Bernardini, J.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dissolution of 3–5 Si ML on Ni has been studied using in situ ultrahigh vacuum Auger electron spectroscopy (AES). The AES signal shows delays and kinetic changes in the dissolution process. These observations, combined with atomistic kinetic Monte Carlo simulations, considering an fcc Ni–Si nonregular solid solution, show that the AES signal should correspond to a successive apparition of the Ni-silicides present in the Ni–Si phase diagram at low temperatures, starting with the Si-richer phase.
ACCESSION #
43277372

 

Related Articles

  • Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions. Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p6215 

    Silicon on insulator layers doped with 8×10[sup 20] As cm[sup -3] and thermally equilibrated at 1100 °C, have been irradiated with 2 MeV Si[sup +] ions. Rutherford backscattering–channeling analysis shows an increase in As disorder upon irradiation significantly larger than the...

  • Organic vapor jet printing at micrometer resolution using microfluidic nozzle arrays. McGraw, Gregory J.; Peters, Diane L.; Forrest, Stephen R. // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p013302 

    Organic vapor jet printing with a print head comprised of a microfluidic Si nozzle array is used to deposit parallel lines of an organic semiconductor thin film with a line width of 16 μm and edge resolution of 4 μm. Line width and feature size are functions of process conditions,...

  • Monte Carlo simulation of a thin film of uniform thickness deposition in a stationary system. Peixoto, Luciano T. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p1910 

    Presents a study that used the Monte Carlo method to simulate the process of thin-film deposition in a stationary vacuum system. Processes of thin-film deposition; Integral form expression for the film thickness; Description of the Monte Carlo method application.

  • Recording physics of perpendicular recording with single layered medium and ring head. Lee, K. J.; Kim, Y. S.; Kim, E. S.; Im, Y. H.; Lee, K. M.; Kim, J. W.; Lee, B. K.; Oh, H. S.; Kim, K. Y.; Park, N. Y.; Lee, T. D. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p8700 

    We show extensive Monte Carlo (MC) results on properties of thin films made of stacked XY triangular layers of atoms bearing Heisenberg spins. The film surfaces are frustrated due to antiferromagnetic in-plane interactions, while interior layers are ferromagnetic. We have included both the...

  • Monte Carlo study of surface-frustrated Heisenberg thin films with magnetoelastic coupling: An off-lattice model. Ngo, V. T.; Diep, H. T. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p8399 

    We show extensive Monte Carlo (MC) results on properties of thin films made of stacked XY triangular layers of atoms bearing Heisenberg spins. The film surfaces are frustrated due to antiferromagnetic in-plane interactions, while interior layers are ferromagnetic. We have included both the...

  • A new method for simulating the late stages of island coarsening in thin film growth: The role of... Mattsson, Thomas R.; Mills, Greg // Journal of Chemical Physics;6/22/1999, Vol. 110 Issue 24, p12151 

    Describes a method developed for simulating the evolution of one-atom-high islands coarsening in thin film growth. Regimes of coarsening studied; Kinetic Monte Carlo simulations; Atomistic model; Accelerated method for simulating coarsening; Coarsening by island diffusion; Coarsening by...

  • 3D Monte Carlo Study of Thermal Noise in DG-MOSFET. Dollfus, P.; Bournel, A.; Velázquez, J. E. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p749 

    By means of self-consistent 3D Monte Carlo simulation we study steady-state and noise characteristics of Single (SG) and Double Gate (DG) MOSFET based on unintentionally doped ultra-thin silicon film. The effect of possible residual discrete impurity in the channel is considered. Preliminary...

  • Monte Carlo calculation of electron scattering from surface films. Williamson, William; Antolak, A. J. // Journal of Applied Physics;11/15/1985, Vol. 58 Issue 10, p3687 

    Presents information on a study which computed the electron backscattering coefficient and reflected energy for surface films on bulk substrates using the photon-electron Monte Carlo transport code SANDYL. Description of SANDYL; Results and discussion; Conclusions.

  • Erratum: Monte Carlo treatment of impurity diffusion in polycrystalline thin films [J. Appl. Phys. 56, 924(1984)]. Lavine, J. P.; Losee, D. L. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4483 

    Presents a correction to the study 'Monte Carlo Treatment of Impurity Diffusion in Polycrystalline Thin Films,' by J.P. Lavine and D.L. Losee, which appeared in the 1985 issue of the 'Journal of Applied Physics.'

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics