Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

Jin, C. Y.; Kojima, O.; Kita, T.; Wada, O.; Hopkinson, M.; Akahane, K.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021109
Academic Journal
Self-assembled InAs/GaAs quantum dots (QDs) incorporated in an asymmetric GaAs/Al0.8Ga0.2As vertical cavity have been employed as an optical nonlinear medium for reflection-type all-optical switches. Switching time down to 23 ps together with wavelength tuning range over 30 nm have been achieved in this structure. An angle-dependent behavior of the switching time has been observed, which suggests there is a coupling mechanism between the ground and excited states in QDs with different sizes.


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