TITLE

Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes

AUTHOR(S)
Cook, N. B.; Krier, A.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 μm at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.
ACCESSION #
43277358

 

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