Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

Keda Wang; Daxing Han; Guozhen Yue; Baojie Yan; Yang, Jeffrey; Guha, Subhendu
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023506
Academic Journal
We studied photoluminescence (PL) of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells in the annealed and light-soaked states under various electric biases during light soaking. PL intensity from grain boundaries decreased after light soaking under a reverse bias, which implies a reduction in the radiative recombination rate as a consequence of an increase in nonradiative recombination centers in grain-boundary regions. However, such PL change was not observed after light soaking under open-circuit condition. The results suggest that the reverse bias during light soaking enhanced metastable defect generation in the grain-boundary regions, which is consistent with the explanation in our previous nc-Si:H cell stability studies.


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