TITLE

Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

AUTHOR(S)
Molle, Alessandro; Brammertz, Guy; Lamagna, Luca; Fanciulli, Marco; Meuris, Marc; Spiga, Sabina
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.
ACCESSION #
43277339

 

Related Articles

  • Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate. Kim, C. Y.; Jeong, K. S.; Kang, Y. S.; Cho, S. W.; Cho, M.-H.; Chung, K. B.; Ko, D.-H.; Yi, Y.; Kim, H. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p114112 

    We investigated the chemical states and nature of the defect states below the conduction band edge of HfO2 films grown on GaAs (100) substrates using high-resolution x-ray photoelectron spectroscopy (HRXPS), x-ray absorption spectroscopy (XAS), and density functional theory calculations. O...

  • Modulation of the band offsets between La2Hf2O7 and fully depleted SiGe on insulator by NH3 treatment. Gao, Ligang; Xia, Yidong; Guo, Hongxuan; Xu, Bo; Liu, Zhiguo; Yin, Jiang // Journal of Applied Physics;Aug2009, Vol. 106 Issue 4, p046104 

    Band alignments of La2Hf2O7 (LHO) films grown on fully depleted SiGe on insulator (FD SGOI) substrates have been investigated by x-ray photoelectron technique. The valence and conduction band offsets for LHO/FD SGOI systems are determined to be 3.25 and 1.49 eV, respectively. Such asymmetric...

  • Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate. Yu, T.; Jin, C. G.; Yang, Y.; Zhuge, L. J.; Wu, X. M.; Wu, Z. F. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 4, p044105 

    The effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate has been investigated by high-resolution cross-sectional transmission electron micrographs, x-ray photoelectron spectroscopy, VBS, capacitance-voltage (C-V), and current...

  • Electrical properties of HfO2/La2O3 gate dielectrics on Ge with ultrathin nitride interfacial layer formed by in situ N2/H2/Ar radical pretreatment. Lin, Ming-Ho; Lan, Chun-Kai; Chen, Chih-Chiao; Wu, Jyun-Yi // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p182105 

    In situ N2/H2/Ar radical pretreatment on p-type Ge (100) with HfO2/La2O3 high-κ gate oxide was investigated by remote rf plasma on radical-assisted atomic layer deposition. The interfacial LaGeOxNy formation and Ge outdiffusion were also investigated by x-ray photoelectron spectroscopy and...

  • Physical model for the laser induced forward transfer process. Röder, Tobias C.; Köhler, Jürgen R. // Applied Physics Letters;2/13/2012, Vol. 100 Issue 7, p071603 

    This paper presents a numerical model which describes the underlying physical processes during laser induced forward transfer. The laser induced forward transfer uses a pulsed laser to transfer thin layers from a transparent support to a substrate. The model predicts the threshold energies Eth...

  • Plasma-Electrospinning Hybrid Process and Plasma Pretreatment to Improve Adhesive Properties of Nanofibers on Fabric Surface. Vitchuli, Narendiran; Shi, Quan; Nowak, Joshua; Nawalakhe, Rupesh; Sieber, Michael; Bourham, Mohamed; McCord, Marian; Zhang, Xiangwu // Plasma Chemistry & Plasma Processing;Apr2012, Vol. 32 Issue 2, p275 

    Electrospun nanofiber mats are inherently weak, and hence they are often deposited on mechanically-strong substrates such as porous woven fabrics that can provide good structural support without altering the nanofiber characteristics. One major challenge of this approach is to ensure good...

  • XPS study of air exposed copper phthalocyanine ultra-thin films deposited on Si(111) native substrates. Krzywiecki, M.; Grządziel, L.; Ottaviano, L.; Parisse, P.; Santucci, S.; Szuber, J. // Materials Science (0137-1339);2008, Vol. 26 Issue 2, p287 

    Results are presented of XPS characterization of ultra-thin copper phthalocyanine (CuPc) (16 nm-QCM controlled) films thermally deposited under UHV conditions on p- and n- type Si(111) substrates covered by native oxide. Our attempt has been focused on comparative studies of thin films in terms...

  • Optical and electronic properties of one-dimensional Ca3Co2O6 thin films: Influence of the oxygen pressure. Moubah, R.; Colis, S.; Schmerber, G.; Petersen, J.; Dinia, A. // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p141907 

    Thin films of Ca3Co2O6 were fabricated on c-cut sapphire substrates by pulsed laser deposition. The films are polycrystalline and can be grown in a large interval of oxygen pressure with significant influence on the film texture. X-ray photoelectron spectroscopy analyses indicated that only Co3+...

  • Room temperature ferromagnetism in Sn1-xVxO2 films prepared by sol-gel method. Zhang, Li; Ge, Shihui; Zuo, Yalu; Zhou, Xueyun; Xiao, Yuhua; Yan, Shiming; Han, Xiufeng; Wen, Zhenchao // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123909 

    The structure and magnetic properties of Sn1-xVxO2 (x=0.02–0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics