Tuning the termination of the SrTiO3(110) surface by Ar+ sputtering

Zhiming Wang; Kehui Wu; Qinlin Guo; Jiandong Guo
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021912
Academic Journal
We report a scanning tunneling microscopy study on the SrTiO3(110) surface treated with Ar+ sputtering followed by annealing. Two types of termination coexist on the surface, which are spatially identified as the 4×1 reconstructed SrTiO layer and the O layer covered by Ti-rich oxide clusters, respectively. The relative areal ratio of the two types is tuned by sputtering dose reproducibly, and monophased surface with either SrTiO or O termination is obtained. The surface is stable at temperatures up to 1100 °C and under oxygen partial pressures from 6×10-5 mbar to ultra high vacuum, providing us a flexible epitaxial growth template.


Related Articles

  • Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO3 surfaces. Herranz, G.; Copie, O.; Gentils, A.; Tafra, E.; Basletic, M.; Fortuna, F.; Bouzehouane, K.; Fusil, S.; Jacquet, É.; Carrétéro, C.; Bibes, M.; Hamzic, A.; Barthélémy, A. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103704 

    Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO3...

  • Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy. Oberbeck, L.; Curson, N. J.; Hallam, T.; Simmons, M. Y.; Bilger, G.; Clark, R. G. // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1359 

    In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunneling microscopy (STM) to position dopant atoms and molecular beam epitaxy to encapsulate the dopants it is necessary to minimize the segregation/diffusion of dopant atoms during silicon...

  • The structure of the polar Sn-doped indium oxide (001) surface. Morales, Erie H.; Diebold, Ulrike // Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253105 

    Epitaxial Sn-doped In2O3 (ITO) thin films were grown using oxygen plasma-assisted molecular beam epitaxy (MBE) on (001) oriented Yttria Stabilized Zirconia. Low-energy-electron-diffraction shows that ITO(001) surface is oxygen terminated and has a c(1×1)-structure with p4g symmetry....

  • Epitaxial ordering of a perylenetetracarboxylic diimide-melamine supramolecular network driven by the [formula] reconstruction. Silly, Fabien; Shaw, Adam Q.; Briggs, G. A. D.; Castell, Martin R. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p023102 

    Substrate mediated ordering and intermolecular interactions are used to create a long-range supramolecular network of perylenetetracarboxylic diimide and melamine on a reconstructed [formula] surface. Scanning tunneling microscopy reveals that the network is composed of a succession of double...

  • Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001). Borysiuk, J.; Bożek, R.; Strupinski, W.; Wysmołek, A.; Grodecki, K.; Polish_hook, R.; Baranowski, J. M. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 2, pN.PAG 

    Transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and micro-Raman investigations of epitaxial graphene on 4H-SiC on-axis and 4° off-axis are presented. The STM images show that there is superimposed on 1×1 graphene pattern the carbon nanomesh of honeycomb...

  • Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111). Sekiguchi, Takeharu; Yoshida, Shunji; Shiren, Yohei; Itoh, Kohei M.; Myslivecˇek, Josef; Voigtländer, Bert // Journal of Applied Physics;4/15/2007, Vol. 101 Issue 8, p081702 

    The very initial stage of the molecular beam epitaxy of Si and Ge on Si(111)-7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si(111) substrate by annealing at 830...

  • A combined ion-sputtering and electron-beam annealing device for the in vacuo postpreparation of scanning probes. Eder, Georg; Schlögl, Stefan; Macknapp, Klaus; Heckl, Wolfgang M.; Lackinger, Markus // Review of Scientific Instruments;Mar2011, Vol. 82 Issue 3, p033701 

    We describe the setup, characteristics, and application of an in vacuo ion-sputtering and electron-beam annealing device for the postpreparation of scanning probes (e.g., scanning tunneling microscopy (STM) tips) under ultrahigh vacuum (UHV) conditions. The proposed device facilitates the...

  • An adaptive scan generator for a scanning tunneling microscope. Heuell, P.; Kulakov, M. A.; Bullemer, B. // Review of Scientific Instruments;Jan1994, Vol. 65 Issue 1, p89 

    A novel scan generator for a scanning tunneling microscope (STM) has been developed. The instrument compares tunneling current with three thresholds values, to generate an x-scanner signal with a dynamically changeable step size for adaptation to sharp topographical changes. It has two...

  • Plug "n" play scanning probe microscopy. Michely, Thomas; Kaiser, Markus; Rost, Marcel J. // Review of Scientific Instruments;Dec2000, Vol. 71 Issue 12 

    A new concept of scanning probe microscopy allows the investigation of arbitrarily positioned and oriented, possibly curved locations situated at large and immobile objects, which cannot be isolated from the environment. The concept is based on the beetle type scanning probe microscope and uses,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics