TITLE

A modified scheme of charge sensitive infrared phototransistor

AUTHOR(S)
Zhihai Wang; Komiyama, S.; Ueda, T.; Nagai, N.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Charge sensitive infrared phototransistors (CSIP) realized in a GaAs/AlGaAs double quantum well (QW) structure have so far exploited the tunneling of excited electrons from an isolated island of upper QW to the lower two-dimensional electron gas layer. Another type of CSIP is developed by using a GaAs/AlGaAs double QW crystal, in which inter-QW tunneling is suppressed. Instead of “vertical” tunneling, excited electrons in the upper QW flow in and out the isolated island “laterally” via translational motion through gate-induced potential barriers. The scheme is demonstrated for wavelengths ≈14.6 μm but is suitable for expanding toward longer wavelengths.
ACCESSION #
43277334

 

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