TITLE

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

AUTHOR(S)
Miyao, Masanobu; Toko, Kaoru; Tanaka, Takanori; Sadoh, Taizoh
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2/V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.
ACCESSION #
43277331

 

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