Modification of magnetotransport properties across patterned GaMnAs nanoconstrictions by application of high current densities

Sung Un Cho; Hyung Kook Choi; Chan Uk Yang; Park, Yun Daniel; Da Silva, Fabio C. S.; Osminer, Teresa; Pappas, David P.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022517
Academic Journal
We report on modifications in the magnetotransport properties across patterned GaMnAs nanoconstrictions by the application of high current densities (<107 A/cm2). Initially, we observe controllable changes in the electrical resistance with the direction of the bias current. Repeated biases at high current densities greatly increase the constriction resistances. Subsequent biasing and magnetotransport measurements show nearly a fourfold increase in the magnetoresistances and large changes in the magnetic switching behavior of GaMnAs. The initial reversibility of the changes in resistance suggests that dopant electromigration may locally alter the interstitial concentrations of Mn at the nanoconstriction.


Related Articles

  • Emissivity — a remote sensor of giant magnetoresistance. Stirk, S. M.; Thompson, S. M.; Matthew, J. A. D. // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p102505 

    The link between emissivity in the mid-to-far-infrared regime and electrical conductivity is used to probe magnetoresistance. A direct relationship between the change in radiated flux and giant magnetoresistance is confirmed by experiment. The potential for spatially resolved measurements is...

  • Domain wall displacement in Py square ring for single nanometric magnetic bead detection. Vavassori, P.; Metlushko, V.; Ilic, B.; Gobbi, M.; Donolato, M.; Cantoni, M.; Bertacco, R. // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203502 

    An approach based on domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particle is presented. We modeled and experimentally demonstrated the viability of the approach using an anisotropic magnetoresistance device made by a...

  • rf amplification in a three-terminal magnetic tunnel junction with a magnetic vortex structure. Nozaki, T.; Kubota, H.; Yuasa, S.; Shiraishi, M.; Shinjo, T.; Suzuki, Y. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022513 

    We fabricated a three-terminal MgO-based magnetic tunnel junction including a free layer for use as a vortex-type spin structure. The resonant motion of the magnetic vortex core, excited by the application of rf current to the free layer, was successfully detected through the tunneling...

  • Minimizing the scattering of a nonmagnetic cloak. Jingjing Zhang; Yu Luo; Mortensen, Niels Asger // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113511 

    Nonmagnetic cloak offers a feasible way to achieve invisibility at optical frequencies using materials with only electric responses. In this letter, we suggest an approximation of the ideal nonmagnetic cloak and quantitatively study its electromagnetic characteristics using a full-wave...

  • Evidence of the magnetoimpedance effect up to microwave frequencies in polycrystalline La0.7Sr0.3MnO3 films. Stanescu, D.; Xavier, P.; Richard, J.; Dubourdieu, C. // Journal of Applied Physics;4/1/2006, Vol. 99 Issue 7, p073707 

    We present broadband measurements of the magnetoimpedance of polycrystalline La0.7Sr0.3MnO3 films grown on silicon as a function of three parameters: (i) the frequency (0–1 GHz), (ii) the temperature (4–275 K), and (iii) the applied magnetic field (0–6 T). In this paper it...

  • Large magnetoresistance in high mobility topological insulator Bi2Se3. Yan, Yuan; Wang, Li-Xian; Yu, Da-Peng; Liao, Zhi-Min // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033106 

    We report the magnetotransport properties of individual Bi2Se3 nanoplates. The carrier Hall mobility is up to 104 cm2/Vs. A large positive linear magnetoresistance (MR) approaching to 400% without sign of saturation was observed at 14 T. By angular dependence measurements, we demonstrate that...

  • Electromigration resistance in a short three-contact interconnect tree. Chang, C. W.; Choi, Z.-S.; Thompson, C. V.; Gan, C. L.; Pey, K. L.; Choi, W. K.; Hwang, N. // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p094505 

    Electromigration has been characterized in via-terminated interconnect lines with additional vias in the middle, creating two adjacent segments that can be stressed independently. The mortality of a segment was found to depend on the direction and magnitude of the current in the adjacent...

  • The transverse resistivity in S/C multifilament wires studied through ac susceptibility measurements. Fabbricatore, P.; Farinon, S.; Incardone, S.; Gambardella, U.; Saggese, A.; Volpini, G. // Journal of Applied Physics;Oct2009, Vol. 106 Issue 8, p083905 

    In this paper we discuss an experimental method based on the ac susceptibility for measuring the effective transverse resistivity in multifilament NbTi wires designed for low loss applications. Short samples of wire are involved in the measurements, with lengths comparable with the twist pitch....

  • 1/f noise in linearized low resistance MgO magnetic tunnel junctions. Almeida, J. M.; Ferreira, R.; Freitas, P. P.; Langer, J.; Ocker, B.; Maass, W. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08B314 

    Low RA MgO magnetic tunnel junctions prepared at Singulus (Ta 3/CuN 30/Ta 5/PtMn 20/CoFe 2.5/Ru 0.7/CoFeB 3/MgO 1.2/CoFeB 3/Ta 5 (thickness in nanometers) were microfabricated at INESC-MN. The junctions were patterned into micron-sized sensors (5–20 μm2) with controlled shape...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics