TITLE

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

AUTHOR(S)
Sahonta, S.-L.; Dimitrakopulos, G. P.; Kehagias, Th.; Kioseoglou, J.; Adikimenakis, A.; Iliopoulos, E.; Georgakilas, A.; Kirmse, H.; Neumann, W.; Komninou, Ph.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021913
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A mechanism for compositional modulations in InxAl1-xN films is described which considers growth kinetics during molecular beam epitaxy. InAlN crystalline films with various indium contents, grown on GaN or AlN buffer layers to create a variation in lattice mismatch conditions, were studied by transmission electron microscopy. Films comprise of columnar domains which are observed regardless of mismatch, with increasing indium concentration toward domain edges. We propose that indium is incorporated preferentially between adjacent dynamical InAlN platelets, owing to tensile strain generated upon platelet coalescence. The resulting In-rich boundaries are potential minima for further indium adatoms, creating a permanent indium composition gradient.
ACCESSION #
43277321

 

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