Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Sahonta, S.-L.; Dimitrakopulos, G. P.; Kehagias, Th.; Kioseoglou, J.; Adikimenakis, A.; Iliopoulos, E.; Georgakilas, A.; Kirmse, H.; Neumann, W.; Komninou, Ph.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021913
Academic Journal
A mechanism for compositional modulations in InxAl1-xN films is described which considers growth kinetics during molecular beam epitaxy. InAlN crystalline films with various indium contents, grown on GaN or AlN buffer layers to create a variation in lattice mismatch conditions, were studied by transmission electron microscopy. Films comprise of columnar domains which are observed regardless of mismatch, with increasing indium concentration toward domain edges. We propose that indium is incorporated preferentially between adjacent dynamical InAlN platelets, owing to tensile strain generated upon platelet coalescence. The resulting In-rich boundaries are potential minima for further indium adatoms, creating a permanent indium composition gradient.


Related Articles

  • Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy. Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich // Applied Physics Letters;6/30/2008, Vol. 92 Issue 26, p263107 

    Epitaxial silicon nanowires (NWs) of short heights (∼280 nm) on Si <111> substrate were grown and doped in situ with boron on a concentration range of 1015–1019 cm-3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a...

  • Growth and characterization of a delta-function doping layer in Si. Zeindl, H. P.; Wegehaupt, T.; Eisele, I.; Oppolzer, H.; Reisinger, H.; Tempel, G.; Koch, F. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1164 

    We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such δ-function doping layers is only a few lattice planes....

  • Quasi-one-dimensional CaF[sub 2] islands formed on Si(001) by molecular beam epitaxy. Loretto, D.; Ross, F.M. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2363 

    Demonstrates the growth of quasi-dimensional CaF[sub 2] islands on silicon(001) by molecular beam epitaxy. Use of conventional and high resolution transmission electron microscopy; Facets bounding the growth of the islands in two symmetry-equivalent orientations; Attribution of the unusual...

  • Alloy inhomogeneities in InAlAs strained layers grown by molecular-beam epitaxy. Peiró, F.; Cornet, A.; Morante, J. R.; Clark, S. A.; Williams, R. H. // Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2470 

    Presents a transmission electron microscopy study that characterized In[subx]Al[sub1-x]As layers grown by molecular beam epitaxy on InP substrates. Methodology; Results.

  • Optically active three-dimensionally confined structures realized via molecular beam epitaxical.... Rajkumar, K.C.; Madhukar, A.; Rammohan, K.; Rich, D.H.; Chen, P.; Chen, L. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2905 

    Presents the optically active three-dimensionally confined semiconductor volumes through the step molecular beam epitaxial growth. Fabrication of the materials on pyramidal mesas on (111)boron substrates; Use of the transmission electron microscopy; Lateral linear dimension of the emissions.

  • Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer. Ponchet, A.; Rocher, A.; Emery, J-Y.; Starck, C.; Goldstein, L. // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p1977 

    Examines the GaInAsP/InP multilayer grown by gas source molecular beam epitaxy. Assessment of interplanar spacing variations based on high resolution transmission electron microscopy images; Strain distribution in a common zero-net strained superlattices; Effect of nonplanar interfaces on...

  • Compositional analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by determination of film thickness. Maier, M.; Köhler, K.; Höpner, A.; As, D. J. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p3820 

    Provides information on a study that determined the thickness of the individual layers of molecular beam epitaxy grown pseudomorphic quantum well structures by transmission electron microscopy. Methodology of the study; Results and discussion on the study; Conclusions.

  • Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxy. Xue, G.; Xiao, H. Z.; Hasan, M.-A.; Greene, J. E.; Birnbaum, H. K. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2512 

    Presents a study which investigated the growth of germanium (Ge)(100) by molecular beam epitaxy using a combination of in situ reflection high-energy electron diffraction and post-deposition cross-sectional transmission electron microscopy (XTEM). Experimental procedure followed; Result of the...

  • p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy. Krishnamurthy, Mohan; Petroff, P. M.; Arias, J. M. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7952 

    Presents a study which analyzed the structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on gallium arsenide boron substrates using transmission electron microscopy (TEM). Problems with the growth of HgCdTe devices on gallium arsenide- and silicon-based substrates; Method...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics