TITLE

Electrical properties of Y-doped CaCuO[sub 2] films prepared by organometallic chemical vapor

AUTHOR(S)
Kobayashi, Kenkichiro; Ishihara, Yozo; Matsushima, Shigenori; Okada, Genji
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2868
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of Y-doped CaCuO[sub 2] films in terms of its electrical characteristics. Application of organometallic chemical vapor deposition of the films; Comparison on undoped and doped CaCuO[sub 2] using resistivity as a parameter; Role of chelates in controlling the rate of deposition.
ACCESSION #
4323256

 

Related Articles

  • Semi-insulating In[sub 0.49]Ga[sub 0.51]P grown at reduced substrate temperature by low-pressure.... Hartmann, Q.J.; Gardner, N.F. // Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1822 

    Details the growth of high-resistivity unintentionally-doped In[sub 0.49]Ga[sub 0.51]P lattice matched to gallium arsenide via low-pressure metalorganic chemical vapor deposition. Surface quality of the layers; Relation between resistivity and growth temperature; Presence of an electron trap.

  • Doping superlattices in organometallic vapor phase epitaxial InP. Yuan, J. S.; Gal, M.; Taylor, P. C.; Stringfellow, G. B. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p405 

    Doping superlattices (nipi structures) have been grown in InP using organometallic vapor phase epitaxy in an atmospheric pressure reactor using trimethylindium and phosphine in a hydrogen ambient. The n-type and p-type dopants were diethyltellurium and dimethylzinc, respectively. The 4-K...

  • Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions. Bayram, C.; Péré-laperne, N.; McClintock, R.; Fain, B.; Razeghi, M. // Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121902 

    A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL...

  • Tailoring the hole concentration in superlattices based on nitride alloys. Qing-Hong Zheng; Yi-An Yin; Li-Hong Zhu; Jin Huang; Xiao-Ying Li; Bao-Lin Liu // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222104 

    By introducing Mg-doped InGaN/AlGaN strained-layer superlattice (SL) as p-type layer, the performance of p-type Ohmic contact is improved as compared with AlGaN/GaN and InGaN/GaN SLs. InGaN/AlGaN SL yields higher hole concentration due to larger oscillation of the valence band edge and smaller...

  • Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition. Ugolini, C.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151903 

    The authors report on the synthesis of Er-doped GaN epilayers by in situ doping by metal-organic chemical vapor deposition (MOCVD). The optical and electrical properties of the Er-doped GaN epilayers were studied by photoluminescence (PL) spectroscopy and van der Pauw–Hall method. Both...

  • Aluminum gallium nitride short-period superlattices doped with magnesium. Saxler, A.; Mitchel, W.C.; Kung, P.; Razeghi, M. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2023 

    Discusses the growth of short-period superlattices consisting of alternating layers of magnesium-doped gallium nitride (GaN:Mg) and magnesium-doped aluminum gallium nitride (AlGaN:Mg) by low-pressure organometallic vapor phase epitaxy. Electrical properties of the superlattices as function of...

  • Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study. Hornos, T.; Gali, A.; Devaty, R. P.; Choyke, W. J. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212114 

    Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical-vapor-deposited (CVD) silicon carbide (SiC) layers. We simulated the CVD conditions by using the appropriate chemical potentials for hydrogen and phosphorus (P). We find that the site...

  • Eu luminescence center created by Mg codoping in Eu-doped GaN. Lee, Dong-gun; Nishikawa, Atsushi; Terai, Yoshikazu; Fujiwara, Yasufumi // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p171904 

    We investigated the photoluminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy. Some emission due to intra-4f shell transition of 5D0-7F2 in Eu3+ ions in a center with Eu and Mg was observed together with typical Eu emission. The peak intensity of the Eu-Mg...

  • Superconducting properties of Ba2YCu3O7-x thin films prepared by chemical vapor deposition on SrTiO3 and a metal substrate. Yamaguchi, Taichi; Aoki, Shinya; Sadakata, Nobuyuki; Kohno, Osamu; Osanai, Hiroshi // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1581 

    Superconducting Ba2 YCu3 O7-x thin films were prepared by chemical vapor deposition using β-diketonate chelates on SrTiO3 single crystalline substrates, metal substrates, and metal substrates with a polycrystalline SrTiO3 buffer. The temperatures of complete superconducting transitions were...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics