TITLE

High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

AUTHOR(S)
Nayak, D.K.; Woo, J.C.S.; Park, J.S.; Wang, K.L.; MacWilliams, K.P.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2853
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of p-channel metal-oxide-semiconductor field-effect transistor on strained silicon layer. Improvement of channel mobility by hole confinement; Factors contributing to channel enhancement; Decrease in intervalley carrier scattering.
ACCESSION #
4323251

 

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