Raman study of electron confinement in Si delta-doped GaAs

Mlayah, A.; Carles, R.; Bedel, E.; Munoz-Yague, A.
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2848
Academic Journal
Reports the Raman spectroscopy measurements in silicon delta-doped gallium arsenide. Observation of the coupling of the intersubband plasmons with polar phonons; Application of molecular beam epitaxy; Estimation of the quasi-two-dimensional electron gas using depth analysis.


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