TITLE

Raman study of electron confinement in Si delta-doped GaAs

AUTHOR(S)
Mlayah, A.; Carles, R.; Bedel, E.; Munoz-Yague, A.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2848
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the Raman spectroscopy measurements in silicon delta-doped gallium arsenide. Observation of the coupling of the intersubband plasmons with polar phonons; Application of molecular beam epitaxy; Estimation of the quasi-two-dimensional electron gas using depth analysis.
ACCESSION #
4323249

 

Related Articles

  • Raman study of low growth temperature GaAs. Gant, T.A.; Shen, H. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1453 

    Investigates the use of Raman spectroscopy to characterize gallium arsenide grown by molecular-beam epitaxy at low temperature. Measurement of the epilayer by x-ray diffraction; Significance of the frequency shift of the longitudinal optics phonon in the reduction of the electric field;...

  • Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing. Xiao, Guangming; Yin, Shiduan; Zhang, Jingping; Dong, Aihua; Zhu, Peiran; Liu, Jiarui // Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p4843 

    Presents information on a study which analyzed crystalline quality by using Rutherford backscattering (RBS)/channeling technique and Raman scattering spectrometry, in molecular beam epitaxy gallium arsenide films on silicon (Si) and implanted with Si ions. Dose dependence of the regrowth;...

  • Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy. Begum, N.; Piccin, M.; Jabeen, F.; Bais, G.; Rubini, S.; Martelli, F.; Bhatti, A. S. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p104311 

    We report Raman studies of GaAs and InAs nanowires (NWs) grown on SiO2 and GaAs surfaces by means of catalyst-assisted molecular beam epitaxy. We have investigated several tens of NWs grown using either Mn or Au as a catalyst. The LO and TO phonon lines of the NWs showed an energy downshift and...

  • The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN/GaAs grown by molecular beam epitaxy. Bharatan, S.; Iyer, S.; Nunna, K.; Collis, W. J.; Matney, K.; Reppert, J.; Rao, A. M.; Kent, P. R. C. // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p023503 

    The structural, optical, and vibrational properties of a GaAsSbN epilayer lattice matched to GaAs with a band gap of 1 eV have been investigated using a variety of characterization techniques. These layers have potential applications in GaAs based tandem solar cells that utilize the near...

  • Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1-x. Liu, H. F.; Xiang, N.; Tripathy, S.; Chua, S. J. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p103503 

    Using micro-Raman spectroscopy, we have investigated the vibrational properties of coherently strained GaNxAs1-x alloys grown on GaAs (001) substrates by molecular beam epitaxy. The effect of compositional disorder in GaNxAs1-x alloys has been studied by analyzing the broadening, asymmetry, and...

  • Photoluminescence study of GaAs thin films and nanowires grown on Si(111). Falcão, B.; Leitão, J.; González, J.; Correia, M.; Zayas-Bazán, K.; Matinaga, F.; Moreira, M.; Leite, C.; Oliveira, A. // Journal of Materials Science;Feb2013, Vol. 48 Issue 4, p1794 

    Mg-doped GaAs nanowires have been grown by molecular beam epitaxy on a partially Au-coated Si(111) substrate by the vapor-liquid-solid mechanism. Outside the coated areas, a thin film of GaAs was grown epitaxially at the same time. The optical properties in both parts of the sample were...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...

  • Nucleation and initial growth of GaAs on Si substrate. Rosner, S. J.; Koch, S. M.; Harris, J. S. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1764 

    The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325...

  • Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670 

    Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics