TITLE

In situ investigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry

AUTHOR(S)
Shirai, H.; Drevillon, B.; Ossikovski, R.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evaluates plasma-deposited amorphous silicon and silicon nitride interfaces via infrared ellipsometry. Role of deposition sequence in the experiment; Relationship of deposition sequence and the underlayer material; Discussion on the formation mechanism of the interfaces.
ACCESSION #
4323243

 

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