Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma

Agarwala, Sambhu; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2830
Academic Journal
Examines the effectiveness of selective reactive ion etching process using HBr plasma of indium gallium arsenide/indium aluminum arsenide heterostructures. Voltage, chamber pressure and flow rate conditions for achieving etch rates of 110 and 0.67 Angstrom per minute; Use of x-ray photoelectron spectroscopy.


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