TITLE

Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma

AUTHOR(S)
Agarwala, Sambhu; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2830
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effectiveness of selective reactive ion etching process using HBr plasma of indium gallium arsenide/indium aluminum arsenide heterostructures. Voltage, chamber pressure and flow rate conditions for achieving etch rates of 110 and 0.67 Angstrom per minute; Use of x-ray photoelectron spectroscopy.
ACCESSION #
4323242

 

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