Synchrotron radiation assisted Si epitaxial growth: Comparison of growth characteristics between

Urisu, Tsuneo; Akutsu, Tetsuo; Kuchitsu, Kozo
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2821
Academic Journal
Examines the effects of synchrotron radiation on the silicon epitaxial growth of Si[sub 2]H[sub 6] and SiH[sub 2]Cl[sub 2] gases. Temperature dependence of the crystal growth for SiH[sub 2]Cl[sub 2]; Dominance of the gas phase excitation mechanism for Si[sub 2]H[sub 6]; Effectiveness of SR-assisted desorption of hydrogen in the crystallization of the gases.


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