Photodetectors fabricated from rapid-thermal-oxidized porous Si

Chaochieh Tsai; Li, K.-H.; Campbell, Joe C.; Tasch, Al
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2818
Academic Journal
Presents a metal-semiconductor-metal photoconductor and a p-n photodiode fabricated from rapid-thermal oxidized porous silicon. Use of anodic etching to form the porous silicon layers; Responsivity of the photoconductor; External quantum efficiency exhibited by the photodiode at 740 nanometer.


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