Pitfalls in the measurement of metal/p-Si contacts: The effect of hydrogen passivation

Sullivan, J.P.; Graham, W.R.; Tung, R.T.; Schrey, F.
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2804
Academic Journal
Examines the origin of current voltage measurement problems of metal semiconductor ohmic contacts on hydrogen terminated silicon substrates. Effects of acceptor passivation during silicon chemical etching; Influence of room temperature metal deposition on atomically clean, well-annealed p-type substrates on the active dopant profile.


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