Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs

Stareev, G.
May 1993
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2801
Academic Journal
Examines the characteristics of low resistance nonalloyed titanium/platinum/gold ohmic contacts formed on heavily doped p-gallium arsenide semiconductors by ion bombardment. Correlation of the electrical properties and structural modifications of the interface; Contact resistivity of the material at different temperatures.


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