TITLE

Stress releasing mechanisms in In[sub 0.2]Ga[sub 0.8]As layers grown on misoriented GaAs [001]

AUTHOR(S)
Werner, P.; Zakharov, N.D.; Chen, Y.; Liliental-Weber, Z.; Washburn, J.; Klem, J.F.; Tsao, J.Y.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2798
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of substrate misorientation on the structure and morphology of In[sub 0.2]Ga[sub 0.8]As films grown by molecular beam epitaxy on vicinal, near (001), gallium arsenide substrates. Use of transmission electron microscopy; Angle of dislocation networks in interfaces with exceeding critical thickness.
ACCESSION #
4323230

 

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