TITLE

Effects of annealing conditions on heavily carbon-doped InGaAs

AUTHOR(S)
Han, W.Y.; Calderon, L.; Lu, Y.; Schauer, S.N.; Moerkirk, R.P.; Lee, H.S.; Flemish, J.R.; Jones, K.A.; Yang, L.W.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2578
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the heavily carbon-doped InGaAs samples with low In mol fractions annealed without silicon nitride caps in the H[sub 2] compound. Observation of hydrogen diffusion; Absence of hydrogen outdiffusion for uncapped samples; Formation of the formed recombination.
ACCESSION #
4323208

 

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