Current-voltage characteristics and interface state density of GaAs Schottky barrier

Maeda, Keiji; Ikoma, Hideaki; Sato, Kenji; Ishida, Toshiki
May 1993
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2560
Academic Journal
Examines the density distribution of interface states in GaAs Schottky barrier from nonideal I-V characteristics by the interfacial layer model. Increase of the ideality factor with increasing forward bias voltage; Observation of the fermi level of interface states shifts; Magnitude of the density states.


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