Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

Steckl, A.J.; Roth, M.D.; Powell, J.A.; Larkin, D.J.
May 1993
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2545
Academic Journal
Examines the 3C SiC film surface grown at 6H SiC substrates through atomic probe microscopy. Use of the scanning tunneling microscopy; Measurement of the nearest-neighbor atomic spacing for 3C layer; Orientation of the terraces at the right angles.


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