Thermally stable oxygen implant isolation of p-type Al[sub 0.2]Ga[sub 0.8]As

Zolper, John C.; Baca, Albert G.; Chalmers, Scott A.
May 1993
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2536
Academic Journal
Investigates the use of high dose oxygen implantation to form resistivity regions in p-type Al[sub 0.2]Ga[sub 0.8]As. Creation of Al[sub 0.2]Ga[sub 0.8]As layers with sheet resistance; Presence of apparent energy for conduction after annealing at 800 degrees Celsius.


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