TITLE

Two classes of recombination behavior as studied by the technique of the electron beam induced

AUTHOR(S)
Kittler, M.; Seifert, W.; Radzimski, Z.J.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2513
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the recombination activity of NiSi[sub 2] precipitates and misfit dislocations in nitrogen contaminated silicon using electron beam induced current method. High recombination activity of the precipitates; Inactivity of misfit dislocations at room temperature; Increase of recombination activity upon cooling.
ACCESSION #
4323184

 

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