TITLE

Silicon interstitial absorption during thermal oxidation at 900 degrees C by extended defects

AUTHOR(S)
Roth, David J.; Huang, Robert Y.S.; Plummer, James D.; Dutton, Robert W.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2498
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interaction between extended defects and silicon interstitials introduced via thermal oxidation. Application of the buried epitaxial layer of boron as interstitials monitor; Formation of a layer of extended defects; Measurement of the amount of oxidation-enhanced diffusion.
ACCESSION #
4323179

 

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