Silicon interstitial absorption during thermal oxidation at 900 degrees C by extended defects

Roth, David J.; Huang, Robert Y.S.; Plummer, James D.; Dutton, Robert W.
May 1993
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2498
Academic Journal
Examines the interaction between extended defects and silicon interstitials introduced via thermal oxidation. Application of the buried epitaxial layer of boron as interstitials monitor; Formation of a layer of extended defects; Measurement of the amount of oxidation-enhanced diffusion.


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