TITLE

Blue-green injection lasers containing pseudomorphic Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y]

AUTHOR(S)
Gaines, J.M.; Drenten, R.R.; Haberern, K.W.; Marshall, T.; Mensz, P.; Petruzzello, J.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2462
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the performance of blue-green injection lasers containing Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y] cladding layers. Measurement of the pulsed output powers at room temperature; Improvement in optical confinement; Separate-confinement of the heterostructures of lasers.
ACCESSION #
4323168

 

Related Articles

  • Ultralow-loss broadened-waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers. Garbuzov, D. Z.; Martinelli, R. U.; Lee, H.; York, P. K.; Menna, R. J.; Connolly, J. C.; Narayan, S. Y. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2006 

    Broadening the waveguides of 2 μm AlGaAsSb/InGaAsSb separate-confinement multiquantum-well lasers decreases their internal losses to 2 cm-1, while threshold current densities remain as low as 300 A/cm2. The consequently high cw differential efficiency of 0.36 results in output powers of 1.2 W...

  • Difference Mode Generation in Injection Lasers. Aleshkin, V. Ya.; Afonenko, A. A.; Zvonkov, N. B. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1203 

    The nonlinear generation of a difference mode in an injection laser is considered. A new design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate two laser modes with a wavelength of about 1 �m and a difference mode at a wavelength of about 10 �m. In...

  • cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K. Caneau, C.; Srivastava, A. K.; Zyskind, J. L.; Sulhoff, J. W.; Dentai, A. G.; Pollack, M. A. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p55 

    Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices...

  • Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity. Danilova, A. P.; Danilova, T. N.; Imenkov, A. N.; Kolchanova, N. M.; Stepanov, M. V.; Sherstnev, V. V.; Yakovlev, Yu. P. // Semiconductors;Sep99, Vol. 33 Issue 9, p991 

    A reduction in the emission wavelength in the preferred mode of InAsSbP/InAsSb/InAsSbP heterostructure lasers by 50 Ã… is observed when the current is raised from 1.8 to 5 times the threshold with dc and pulsed power. A comparison of the spectral and spatial distributions of the output as...

  • Quantum-Dimensional Lasers with Weak Temperature Dependence of the Output Power. Nalivko, S. V.; Afonenko, A. A.; Manak, I. S. // Technical Physics Letters;Mar2000, Vol. 26 Issue 3, p193 

    An injection laser configuration based on asymmetric quantum-dimensional heterostructure with inhomogeneous excitation of quantum wells (QW) is proposed. This configuration allows one to substantially reduce the temperature dependence of the output power. It is demonstrated that the relative...

  • Embedded-mirror semiconductor laser. Laidig, W. D.; Lee, J. W.; Caldwell, P. J. // Applied Physics Letters;1984, Vol. 45 Issue 5, p485 

    Data are presented demonstrating the operation of a current-injection laser diode with embedded reflectors instead of etched or cleaved facets. The laser structure, grown by molecular beam epitaxy, uses AlAs-GaAs superlattices SL's in place of conventional AlxGa1-xAs cladding layers. The sample...

  • Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si. Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p023101 

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched...

  • Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy. Ivanov, S. V.; Moiseev, K. D.; Kaıgorodov, V. A.; Solov’ev, V. A.; Sorokin, S. V.; Meltser, B. Ya.; Grebenshchikova, E. A.; Sedova, I. V.; Terent’ev, Ya. V.; Semenov, A. N.; Astakhova, A. P.; Mikhaılova, M. P.; Toropov, A. A.; Yakovlev, Yu. P.; Kop’ev, P. S.; Alferov, Zh. I. // Semiconductors;Jun2003, Vol. 37 Issue 6, p736 

    The lasing of an injection-pumped p-AlGaAsSb/n[SUP0]-InAs/n-CdMgSe double hybrid heterostructure in the mid-IR range is demonstrated for the first time. The lasing wavelength λ is 2.775 μm, and the threshold current density J[SUBth] = 3-4 kA/cm[SUP2] at T = 77 K. The structure grown by...

  • Monolithic integration of a new optoelectronic device based on a modulation-doped heterostructure. Honda, Y.; Suemune, I.; Yamanishi, M. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p621 

    Demonstrates the monolithically integrated lateral-current-injection laser and junction field-effect transistor based on modulation-doped heterostructures. Characteristics of the device; Dynamic on/off ratio in the light output; Compatibility of the laser and the JFET in terms of structures.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics