Lattice location and electrical activity of ion-implanted Sn in InP

Kringhoj, Per; Weyer, Gerd
April 1993
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1973
Academic Journal
Determines the lattice location and electrical activity of ion implanted tin (Sn) in indium phosphide after rapid thermal annealing. Use of Mossbauer spectroscopy and Hall resistivity measurements; Electrical activation in varying Sn concentrations; Reduction of Sn fractions due to Sn precipitation into inactive complexes.


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