TITLE

Lattice location and electrical activity of ion-implanted Sn in InP

AUTHOR(S)
Kringhoj, Per; Weyer, Gerd
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1973
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the lattice location and electrical activity of ion implanted tin (Sn) in indium phosphide after rapid thermal annealing. Use of Mossbauer spectroscopy and Hall resistivity measurements; Electrical activation in varying Sn concentrations; Reduction of Sn fractions due to Sn precipitation into inactive complexes.
ACCESSION #
4323159

 

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