Chemically deposited epitaxial Si[sub 1-x]Ge[sub x] thin film growth at atmospheric pressure

Kuhne, H.
April 1993
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1967
Academic Journal
Describes the growth rate and layer composition of epitaxial Si[sub 1-x]Ge[sub x] thin film growth at atmospheric pressure. Application of the three-partial-rates model; Variation in the silicon gas source; Relation between layer growth and gas phase composition.


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