Lambda-X intervalley transfer in single AlAs barriers under hydrostatic pressure

Carbonneau, Y.; Beerens, J.; Cury, L.A.; Liu, H.C.; Buchanan, M.
April 1993
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1955
Academic Journal
Investigates the contribution of lambda-X intervalley transfer in single aluminum arsenide barrier heterostructures under hydrostatic pressure. Measurement of the current-voltage characteristics; Effect of hydrostatic pressure on the lambda-X transfer; Analysis of the X valley transfer process.


Related Articles

  • Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates. Wasik, D.; Baj, M.; Siwiec-Matuszyk, J.; Gronkowski, J.; Jasinski, J.; Karczewski, G. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5025 

    We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd[sub 1-x]Mg[sub x]Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates. These defects propagating across the...

  • Low Temperature Photoluminescence Of GaAs/GaInP Heterostructures Measured Under Hydrostatic Pressure. Kobayashi, Toshihiko; Nagata, Atsushi; Prins, Andrew D.; Homma, Yasuhiro; Uchida, Kazuo; Nakahara, Jun-ichiro // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p931 

    A study of 11 K photoluminescence measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells is reported for the first time at pressures up to ∼5 GPa. The use of low temperature allows us to study the true nature of a peak at ∼1.46 eV, which dominates instead of...

  • Effect of conduction band nonparabolicity on the optical properties in a single quantum well under hydrostatic pressure and electric field. PANDA, S; PANDA, B // Pramana: Journal of Physics;May2012, Vol. 78 Issue 5, p827 

    The effect of conduction band nonparabolicity on the linear and nonlinear optical properties such as absorption coefficients, and changes in the refractive index are calculated in the AlGaAs/GaAs heterostructure-based symmetric rectangular quantum well under applied hydrostatic pressure and...

  • Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices. Liu, Y.; Kauser, M. Z.; Schroepfer, D. D.; Ruden, P. P.; Xie, J.; Moon, Y. T.; Onojima, N.; Morkoç, H.; Son, K.-A.; Nathan, M. I. // Journal of Applied Physics;6/1/2006, Vol. 99 Issue 11, p113706 

    The current-voltage characteristics of n-GaN/u-AlGaN/n-GaN heterostructure devices are investigated for potential pressure sensor applications. Model calculations suggest that the current decreases with pressure as a result of the piezoelectric effect, and this effect becomes more significant...

  • Energy exchange between heterostructure layers by real-space electron transfer. Mosˇko, Martin; Novák, Ivo // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2011 

    Examines the energy exchange between heterostructure layers by real-space electron transfer (RSET). Background on a Monte Carlo simulation involving an electron transport in the gallium arsenide-n-Al[subx]Ga[sub1-x]As heterostructure; Application of an electron gas model to determine the energy...

  • Picosecond real-space electron transfer in GaAs–n-AlxGa1-xAs heterostructures with graded barriers: Monte Carlo simulation. Mosˇko, Martin; Novák, Ivo // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p890 

    Investigates the real-space electron transfer (RSET) and negative differential conductivity (NDC) in gallium (Ga)arsenide-n-aluminum[subx]Ga[sub1-x]arsenic heterostructures with electric field applied parallel to the layer interfaces. Conditions to consider in order to have the NDC of the...

  • Direct type II-indirect type I conversion of InP/GaAs/InP strained quantum wells induced by.... Gerling, M.; Pistol, M.-E.; Samuelson, L.; Seifert, W.; Fornell, J.-O.; Ledebo, L. // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p806 

    Examines the photoluminescence from thin strained layers of gallium arsenide grown on indium phosphide under hydrostatic pressure. Transformation of type II structures into type I at higher pressures; Measurement of hydrostatic pressure derivative for the valence band offset; Change in the...

  • Intrinsic acceptor antisite defects in GaAs under hydrostatic pressure. Kangarlu, A.; Guarriello, H.; Berney, R.; Yu, P.W. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2290 

    Investigates intrinsic acceptor antisite defects in gallium arsenide crystal under hydrostatic pressure. Use of photoluminescence in the study; Determination of the pressure coefficients; Cause of the small pressure coefficients at 30 kbar transitions.

  • Metastable and nonmetastable deep states of Ge in GaAs. Skierbiszewski, C.; Suski, T. // Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3209 

    Investigates the metastable and nonmetastable deep states of germanium in gallium arsenide. Dependence of states on hydrostatic pressure and sample illumination; Identification of the nature of the germanium-donor states; Enhancement of the electron mobility.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics