TITLE

Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs

AUTHOR(S)
Katsura, S.; Sugiyama, Y.; Oda, O.; Tacano, M.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops aging-free indium phosphide substrates for molecular beam epitaxial growth of indium aluminum arsenide/indium gallium arsenide heterostructures. Evaluation of the InP substrate surface degradation; Use of molecular beam epitaxy; Value of the Hall mobility.
ACCESSION #
4323138

 

Related Articles

  • Direct determination of the valence-band offsets at Ga[sub 0.47]In[sub 0.53]As/InP and.... Landesman, J.P.; Garcia, J.C. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1241 

    Examines the valence-band offsets at gallium indium arsenide (GaInAs)/indium phosphide (InP) and InP/GaInAs heterostructures grown by molecular beam epitaxy. Attribution of band-offset asymmetry to a difference in the chemical nature of the interfaces; Analysis of the core-level spectra; Growth...

  • Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Tsang, W. T. // Applied Physics Letters;1984, Vol. 44 Issue 3, p288 

    Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density...

  • GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy. Lo, Y. H.; Deri, R. J.; Harbison, J.; Skromme, B. J.; Seto, M.; Hwang, D. M.; Lee, T. P. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1242 

    The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides...

  • Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP. Klem, J.; Huang, D.; Morkoç, H.; Ihm, Y. E.; Otsuka, N. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1364 

    GaAs1-xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low-temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with...

  • Optical properties of InGaAs lattice-matched to InP. Nee, T. W.; Green, A. K. // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p5314 

    Discusses a study which measured the optical spectra of a molecular-beam-epitaxially grown indium gallium arsenide epilayer lattice-matched on a (100) indium phosphide substrate in the visible and infrared regions. Experimental details; Spectroscopic analysis and results; Conclusion.

  • High-frequency operation of heavily carbon-doped Ga[sub 0.51]In[sub 0.49]P/GaAs surface-emitting.... de Lyon, T.J.; Woodall, J.M.; McInturff, D.T.; Kirchner, P.D.; Kash, J.A.; Bates, R.J.S.; Hodgson, R.T.; Cardone, F. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p402 

    Examines heavily carbon-doped gallium indium phosphide/gallium arsenide (GaAs) high-frequency operation grown by metalorganic molecular beam epitaxy. Utilization of trimethylgallium in doping GaAs active layer; Reduction of radiative lifetime in GaAs; Determination of transient optical response.

  • Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition. PRZESLAWSKI, TOMASZ; WOLKENBERG, ANDRZEJ; KANIEWSKI, JANUSZ; REGINSKI, KAZIMIERZ; JASIK, AGATA // Optica Applicata;2005, Vol. 35 Issue 3, p627 

    In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor GH on sensitivity parameters of these devices has been investigated. The results...

  • Critical-layer thickness of a pseudomorphic In[sub 0.8]Ga[sub 0.2]As heterostructure grown on InP. Tacano, Munecazu; Sugiyama, Yoshinobu; Takeuchi, Yukihiro // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2420 

    Focuses on the successful growth of a high electron mobility pseudomorphic In[sub 0.8]Ga[0.2]As heterostructure on indium phosphide both by elimination of the overshoot of flux densities and by the precise control of the flux ratio. Calibration technique of reflection high-energy electron...

  • Impact of doping on the performance of short-wavelength InP-based quantum-cascade lasers. Mujagic, E.; Austerer, M.; Schartner, S.; Nobile, M.; Hoffmann, L. K.; Schrenk, W.; Strasser, G.; Semtsiv, M. P.; Bayrakli, I.; Wienold, M.; Masselink, W. T. // Journal of Applied Physics;Feb2008, Vol. 103 Issue 3, p033104 

    The effect of doping concentration on the performance of short-wavelength quantum-cascade lasers based on the strain-compensated InGaAs/InAlAs/AlAs heterostructure on InP, emitting at 3.8 μm, is investigated for average doping concentrations between 0.3 and 3.9×1017 cm-3 (sheet densities...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics