Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs

Katsura, S.; Sugiyama, Y.; Oda, O.; Tacano, M.
April 1993
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1910
Academic Journal
Develops aging-free indium phosphide substrates for molecular beam epitaxial growth of indium aluminum arsenide/indium gallium arsenide heterostructures. Evaluation of the InP substrate surface degradation; Use of molecular beam epitaxy; Value of the Hall mobility.


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